PBSS8110Z,135 datasheet

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Маркировка

PBSS8110Z,135
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS8110Z,135 Collector- Emitter Voltage Vceo Max: 100 V Configuration: Single Dual Collector Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 250mA, 10V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949620 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.4W Power Dissipation: 1400 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 200mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (max): 100V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 150 at 1 mA at 10 V, 150 at 250 mA at 10 V, 100 at 0.5 A at 10 V, 80 at 1 A at 10 V DC Current Gain hFE Max: 150 at 1 mA at 10 V Maximum Power Dissipation: 1400 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS8110Z Other Names: 934057977135, PBSS8110Z /T3
Количество страниц

14 шт.
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135,85 KB